谁知道2SD2601的具体参数？急！！！有悬赏！！
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发布时间：2022-04-22 08:49
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热心网友
时间：2024-03-30 00:02
2SD2600
No.85-1/3
Applications
• Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
• High DC current gain.
• Large current capacity and wide ASO.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 110 V
Collector-to-Emitter Voltage VCEO 100 V
Emitter-to-Base Voltage VEBO 6 V
Collector Current IC 8 A
Collector Current (Pulse) ICP 12 A
Collector Dissipation PC Tc=25°C 35 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current ICBO VCB=80V, IE=0A 0.1 mA
Emitter Cutoff Current IEBO VEB=5V, IC=0A 3.0 mA
DC Current Gain hFE VCE=3V, IC=4A 1500 4000
Gain-Bandwidth Proct fT VCE=5V, IC=4A 20 MHz
Collector-to-Emitter Saturation Voltage VCE(sat) IC=4A, IB=8mA 0.9 1.5 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=4A, IB=8mA 2.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=5mA, IE=0A 110 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=50mA, RBE=100 V
Turn-ON Time ton See specified test circuit. 0.6 s
Storage Time tstg See specified test circuit. 4.8 s
Fall Time tf See specified test circuit. 1.6 s
SANYO Semiconctors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN85
73106IA MS IM TA-1084
Any and all SANYO Semiconctor procts described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconctor representative
nearest you before usingany SANYO Semiconctor procts described or contained herein in such
applications.
SANYO Semiconctor assumes no responsibility for equipment failures that result from using procts
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in procts specifications of any and all SANYO Semiconctor
procts described or contained herein.
2SD2600 NPN Triple Diffused Planar Silicon Darlington Transistor
Driver Applications
2SD2600
No.85-2/3
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7002-003
Electrical Connection
6.2
7.8
8.2
0.2
4.2 0.4
1.0 1.0
5.08
2.54 2.54
8.4
10.0
1.2
0.3
0.6
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
1 2
3
1 : Base
2 : Emitter
3 : Collector
SANYO : ZP
10
8
6
4
2
0
0 1 2 3 4 5
IC -- VCE
0 1 2 3 4 5
IB=0mA
2mA
4mA
IT03402
IC -- VCE
IB=0A
200A
800A
1000A
600A
400A
IT03403
8
6
4
2
0
From top
20mA
18mA
16mA
14mA
12mA
10mA
8mA
6mA
From top
2000A
1800A
1600A
1400A
1200A
Ta=120°C
--40°C 1000
10000
5
3
2
5
5 7
7
7
3
2
2
100
0.1 2 3 5 7 1.0 2 3 5 7 10
hFE -- IC
25°C
VCE=3V
IT03405
Ta=120°C
--40°C
8
6
4
2
0
VCE=3V
25°C
0.4 0.8 1.2 1.6 2.0 2.4
IC -- VBE
IT03404
Collector-to-Emitter Voltage, VCE -- V
Collecotr Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collecotr Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Collector Current, IC -- A
DC Current Gain, hFE
VBE= --5V VCC=50V
INPUT
OUTPUT
100F 470F
50
RB RL
12.5
VR
PW=50s
DC1%
500IB1= --500IB2=IC=4A
TUT
+ +
IB2
IB1
6k200
C
E
B
2SD2600
No.85-3/3
0
50
40
30
20
10
0 20 40 60 80 100 120 140 160
PC -- Tc
IT03409
10ms
100ms
1.0
5
2
2
3
5
2
3
5
2
3
10
0.1
2 3 5 7 10 2 3 5 7 100 2
DC operation
1ms to 100ms : Single pulse
ICP=12A
1ms
IC=8A
IT03408
Tc=25°C
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Case Temperature, Tc -- °C
Collector Dissipation, PC -- W
0.1 2 3 5 7 1.0 2 3 5 7 10
10
5
3
2
1.0
5
3
7
7
0.1 2 3 5 7 1.0 2 3 5 7 10
10
5
3
2
1.0
5
7
7
VCE(sat) -- IC
25°C
IC / IB=500
120°C
Ta= --40°C
IT03406
25°C
IC / IB=500
120°C
VBE(sat) -- IC
IT03407
Ta= --40°C
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Specifications of any and all SANYO Semiconctor procts described or contained herein stipulate
the performance, characteristics, and functions of the described procts in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described procts
as mounted in the customer's procts or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's procts or equipment.
SANYO Semiconctor Co., Ltd. strives to supply high-quality high-reliability procts. However, any
and all semiconctor procts fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, rendant design, and structural design.
In the event that any or all SANYO Semiconctor procts (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
procts must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconctor Co., Ltd.
Any and all information described or contained herein are subject to change without notice e to
proct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconctor proct that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume proction. SANYO Semiconctor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
PS
This catalog provides information as of July, 2006. Specifications and information herein are subject
to change without notice.
热心网友
时间：2024-03-30 00:02
主要参数如下：
集电极最大直流耗散功率Pcm(W)：35
集电极最大允许直流电流Icm(A)：8
集电极-基极击穿电压BVcbo(V)：110
集电极-发射极击穿电压BVceo(V)：100
特征频率ft(Hz)：20M
放大倍数：1500
