RJK1525DPS资料

RJK1525DPS

Silicon N Channel MOS FET High Speed Power Switching

REJ03G1314-0200

Rev.2.00 Feb 08, 2007

Features

• Low on-resistance • Low leakage current • High speed switching

Outline

RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)DG1. Gate2. Drain3. Source123S

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±30 V Drain current ID 17 A Note1Drain peak current ID (pulse) 50 A Body-drain diode reverse drain current IDR 17 A Note1Body-drain diode reverse drain peak current IDR (pulse) 50 A Avalanche current IAPNote3 17 A Note3Avalanche energy EAR 21.6 mJ Channel dissipation Pch Note2 30 W Channel to case thermal impedance θch-c 4.17 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C

Rev.2.00 Feb 08, 2007 page 1 of 6

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RJK1525DPS

Electrical Characteristics

(Ta = 25°C)

Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 150 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 150 V, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 6 11 — S ID = 8.5 A, VDS = 10 V Note4

0.110 Ω ID = 8.5 A, VGS = 10 V Note4 RDS(on) — 0.089 Static drain to source on state

resistance Input capacitance Ciss — 680 — pF VDS = 25 V Output capacitance Coss — 150 — pF VGS = 0 Reverse transfer capacitance Crss — 22 — pF f = 1 MHz Turn-on delay time td(on) — 22 — ns ID = 8.5 A

VGS = 10 V Rise time tr — 70 — ns RL = 8.8 Ω Turn-off delay time td(off) — 47 — ns Rg = 10 Ω Fall time tf — 11 — ns Total gate charge Qg — 18 — nC VDD = 120 V Gate to source charge Qgs — 4.2 — nC VGS = 10 V Gate to drain charge Qgd — 8.3 — nC ID = 17 A Body-drain diode forward voltage

Body-drain diode reverse recovery time Body-drain diode reverse recovery charge

Notes: 4. Pulse test

VDF — 0.88 1.40 V IF = 17 A, VGS = 0 Note4 trr — 95 — ns IF = 17 A, VGS = 0

µC diF/dt = 100 A/µs Qrr — 0.3 — Rev.2.00 Feb 08, 2007 page 2 of 6

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RJK1525DPS

Main Characteristics

Power vs. Temperature Derating40100030030Maximum Safe Operation AreaChannel Dissipation Pch (W)Drain Current ID (A)1003010310.30.0310 µ10PW1 m0 µs ss(1s= 10DChot) ms(Tc Ope = rat25i°Con )2010Operation in this RDS(on)0.1area is limited by 0.01Ta = 25°C0501001502001310301003001000Case Temperature Tc (°C)Drain to Source Voltage VDS (V)Typical Output Characteristics207 V1612846.5 VPulse Test6 V10 V20Typical Transfer CharacteristicsVDS = 10 VPulse TestDrain Current ID (A)Drain Current ID (A)16125.5 V8Tc = 75°C25°C−25°C246810VGS = 5 V40481216200Drain to Source Voltage VDS (V)Drain to Source Saturation Voltage vs.Gate to Source VoltageDrain to Source Saturation Voltage VDS(on) (V)Drain to Source on State Resistance RDS(on) (Ω)8Pulse TestGate to Source Voltage VGS (V)Static Drain to Source on State Resistance vs. Drain Current10.5VGS = 10 V60.20.10.054ID = 25 A212.5 A8.5 A0481216200.020.01131030Pulse Test1003001000Gate to Source Voltage VGS (V)Drain Current ID (A)

Rev.2.00 Feb 08, 2007 page 3 of 6

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RJK1525DPS

Static Drain to Source on State Resistance vs. TemperatureForward Transfer Admittance vs.Drain CurrentStatic Drain to Source on State Resistance RDS(on) (Ω)Forward Transfer Admittance |yfs| (S)0.5VGS = 10 VPulse Test1003010310.30.10.175°CVDS = 10 VPulse Test0.31310301000.4Tc = −25°C0.325°C0.2ID = 25 A12.5 A8.5 A0.10−250255075100125150Case Temperature Tc (°C)Drain Current ID (A) Typical Capacitance vs.Drain to Source Voltage10000030000VGS = 0f = 1 MHzBody-Drain Diode Reverse Recovery TimeReverse Recovery Time trr (ns)10005002001005020105211310di / dt = 100 A / µsVGS = 0, Ta = 25°C301003001000Capacitance C (pF)10000300010003001003010Crss050100150CossCissReverse Drain Current IDR (A)Drain to Source Voltage VDS (V)Dynamic Input CharacteristicsSwitching CharacteristicsDrain to Source Voltage VDS (V)Gate to Source Voltage VGS (V)240ID = 17 AVDD = 30 V60 V120 VVDSVGS16100018012Switching Time t (ns)VGS = 10 V, VDD = 75 VPW = 5 µs, duty ≤ 1 %RG = 10 Ω100tftd(off)td(on)10trtftr120860VDD = 120 V60 V30 V4812164002010.10.3131030100Gate Charge Qg (nC)Drain Current ID (A)

Rev.2.00 Feb 08, 2007 page 4 of 6

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RJK1525DPS

Reverse Drain Current vs.Source to Drain Voltage505Gate to Source Cutoff Voltagevs. Case TemperatureVDS = 10 VID = 10 mA1 mAReverse Drain Current IDR (A)403020VGS = 0 V1010 V5 VPulse Test00.40.81.21.62.0Gate to Source Cutoff Voltage VGS(off) (V)4320.1 mA10-250255075100125150Source to Drain Voltage VSD (V)Case Temperature Tc (°C)Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width310.30.10.030.010.003Tc = 25°CD = 10.50.20.10.050.020.01θch – c (t) = γ s (t) • θch – cθch – c = 4.17°C/W, Tc = 25°Ce1slspu thoPDMPWTD =PWT0.00110 µ100 µ1 m10 m100 m110Pulse Width PW (s)Switching Time Test CircuitVin MonitorD.U.T.RL10ΩVin10 VVDD= 75 Vtd(on)VoutMonitorVinVout10%10%90%tr90%td(off)tf10%Waveform90%

Rev.2.00 Feb 08, 2007 page 5 of 6

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RJK1525DPS

Package Dimensions

Package NameTO-220CFMJEITA Package CodeRENESAS CodePRSS0003AE-APrevious CodeTO-220CFM / TO-220CFMVMASS[Typ.]1.9gUnit: mm10.0 ± 0.3φ3.2 ± 0.24.5 ± 0.32.7 ± 0.24.1 ± 0.30.6 ± 0.12.5 ± 0.22.542.540.7 ± 0.113.6 ± 1.01.0 ± 0.21.15 ± 0.212.0 ± 0.315.0 ± 0.3

Ordering Information

Part No.

RJK1525DPS-00-T2

Quantity

600 pcs

Box (Tube)

Shipping Container

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

production before ordering the product.

Rev.2.00 Feb 08, 2007 page 6 of 6

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