专利名称：Electrical critical dimension measurements
on photomasks
发明人：David Y. Chan申请号：US09773122申请日：20010131公开号：US06537708B2公开日：20030325
专利附图：
摘要：A method for measuring critical dimensions on photomasks, and morespecifically to a method for measuring critical dimensions on photomasks using anelectrical test structure. The test structure may be comprised of a cross resistor for van
der Pauw sheet resistance measurements, a bridge resistor , and a split-bridge resistor
申请人：PHOTRONICS, INC.
代理机构：Amster, Rothstein & Ebenstein
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