METHOD FOR MANUFACTURING SOI SUBSTRATE

专利名称：METHOD FOR MANUFACTURING SOI

SUBSTRATE

发明人：Yoshihiro KOMATSU,Tomoaki MORIWAKA申请号：US13210711申请日：20110816

公开号：US20120045883A1公开日：20120223

专利附图：

摘要：An SOI substrate is manufactured by the following method. An insulating layeris formed on a semiconductor substrate; an embrittled region is formed in thesemiconductor substrate on which the insulating layer is formed by irradiating the

semiconductor substrate with ions; a base substrate is heated to reduce moisturecontent attaching to a surface of the base substrate, wherein the base substrate afterthe heating faces and is in contact with the semiconductor substrate in which the

embrittled region is formed, so that the base substrate and the semiconductor substrateare bonded to each other; and the bonded base substrate and semiconductor substrateis heated to separate the semiconductor substrate along the embrittled region to form asemiconductor layer over the base substrate. In this manner, the SOI substrate in whichbonding defects are be sufficiently reduced can be provided.

申请人：Yoshihiro KOMATSU,Tomoaki MORIWAKA

地址：Atsugi JP,Isehara JP

国籍：JP,JP

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