专利名称：Method and apparatus for measuring the
lifetime on P-N semiconductor junctions byphotovoltaic effect
发明人：Vincenzo Russo申请号：US07/330165申请日：19890329公开号：US04956603A公开日：19900911
摘要：A method for measuring the lifetime of P.N. semiconductor junctions whichincludes subjecting one side of the junction to monochromatic radiation of a pre-established intensity and measuring the voltage Vp generated by the photovoltaic effectat the ends of the junction in order to calculate the lifetime &tgr; because of a
correlation between &tgr; and Vp which can be expressed by means of a function &tgr;(Vp) that takes into account the data relating to the measuring conditions and thestructural parameters of the junction.
申请人：SGS-THOMSON MICROELECTRONICS S.R.L.
代理机构：Birch, Stewart, Kolasch & Birch
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容