专利名称：Self-aligned low resistance metallic
interconnect structures
发明人：Chih-Chao Yang申请号：US15262231申请日：20160912公开号：US09793156B1公开日：20171017
专利附图：
摘要：Methods are provided for fabricating self-aligned, low resistance metalinterconnect structures, as well as semiconductor devices comprising such metal
interconnect structures. A first metal line is formed in a first insulating layer. An etch stop
layer is formed by selectively depositing dielectric material on the first insulating layer. Asecond insulating layer is formed over the etch stop layer and the first metal line, and anopening is etched in the second insulating layer selective to the etch stop layer toprevent etching of the first insulating layer. The opening is filled with a metallic materialto form a second metal line in contact with the first metal line. The first and second metallines are formed with aspect ratios that are less than 2.5 to minimize resistivity of themetal lines. The first and second metal lines collectively form a single metal line of aninterconnect structure.
申请人：International Business Machines Corporation
地址：Armonk NY US
国籍：US
代理机构：Ryan, Mason & Lewis, LLP
代理人：Louis J. Percello
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