专利名称：Vertical trench MOSFET device in integrated
power technologies
发明人：Guru Mathur,Marie Denison,Sameer
Pendharkar
申请号：US14807276申请日：20150723公开号：US09240446B2公开日：20160119
专利附图：
摘要：A semiconductor device having a vertical drain extended MOS transistor may beformed by forming deep trench structures to define at least one vertical drift region
bounded on at least two opposite sides by the deep trench structures. The deep trenchstructures include dielectric liners. The deep trench structures are spaced so as to formRESURF regions for the drift region. Vertical gates are formed in vertically oriented gatetrenches in the dielectric liners of the deep trench structures, abutting the vertical driftregions. A body implant mask for implanting dopants for the transistor body is also usedas an etch mask for forming the vertically oriented gate trenches in the dielectric liners.
申请人：Texas Instruments Incorporated
地址：Dallas TX US
国籍：US
代理人：Jacqueline J. Garner,Frank D. Cimino
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