GT20J321资料

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT

GT20J321

High Power Switching Applications Fast Switching Applications

• The 4th generation • Enhancement-mode

• Fast switching (FS): Operating frequency up to 50 kHz (reference)

High speed: tf = 0.04 µs (typ.)

Low switching loss : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.) • Low saturation voltage: VCE (sat) = 2.0 V (typ.) • FRD included between emitter and collector

󰃧

Unit: mm󰃧

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current

Collector power dissipation (Tc = 25°C)

Junction temperature Storage temperature range

VCES

600 V

JEDEC JEITA

― ―

VGES ±20 V DC IC 20 A

1 ms ICP 40 DC IF 20 A

1 ms IFM 40 TOSHIBA 2-10R1C Weight: 1.7 g (typ.)

PC 45 W Tj Tstg

150 °C −55 to 150

°C

Thermal Characteristics

Characteristics Symbol Max Unit Thermal resistance (IGBT) Thermal resistance (diode)

Rth (j-c) 2.78 °C/W Rth (j-c) 4.23 °C/W

Equivalent Circuit

Collector Gate Emitter

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GT20J321 Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance

Turn-on delay time Rise time

Switching time

Turn-on time Turn-off delay time Fall time Turn-off time Turn-on switching

loss

Turn-off switching loss

IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon Eoff VF trr

IF = 20 A, VGE = 0 IF = 20 A, di/dt = −100 A/µs Inductive Load VCC = 300 V, IC = 20 A VGG = +15 V, RG = 33 Ω

(Note 1) (Note 2)

― ― ―

0.40 0.43

―

mJ

―

VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 2 mA, VCE = 5 V IC = 20 A, VGE = 15 V

VCE = 10 V, VGE = 0, f = 1 MHz

― ― 3.5

― ±500 nA ― 1.0 mA ― 6.5 V

― 2.0 2.45 V ― 3000 ― ― ― ―

0.06 0.04 0.17

― ― ―

µs pF

― 0.24 ― ― ―

0.04 0.34

― ―

Switching loss

Peak forward voltage Reverse recovery time

― 2.1 V ― 100 ― ns Note 1: Switching time measurement circuit and input/output waveforms

VGE 90% −VGE IC RG VCE 0

VCE 10% td (off) 10% tf toff 10% td (on) 10% tr ton L VCC IC 90% 90% 0

10%

Note 2: Switching loss measurement waveforms

VGE 90% 0 10% IC VCE Eoff Eon 5% 0

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IC – VCE

40 Common emitter Tc = 25°C 30 9 20 15 20

VCE – VGE

Collector-emitter voltage VCE (V) Common emitter Tc = −40°C Collector current IC (A) 16 12 20 8 8 40 10 4 IC = 5 A 0 0

4

8

12

16

20

20 10 VGE = 7 V 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V)

Gate-emitter voltage VGE (V)

VCE – VGE

20 20

VCE – VGE

Collector-emitter voltage VCE (V) Common emitter Tc = 25°C Common emitter Tc = 125°C Collector-emitter voltage VCE (V) 16 16 12 12 8 40 10 20 8 10 4 IC = 5 A 0 0

40 20 4 IC = 5 A 0 0

4

8

12

16

20

4 8 12 16 20

Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V)

IC – VGE

40 5 Common emitter VCE = 5 V 30 Common emitter VGE = 15 V

VCE (sat) – Tc

Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) 4 40 3 30 20 10 1 IC = 5 A 20 2 10 Tc = 125°C −40 25 0 0 4 8 12 16 20 0 −60

−20

20

60

100

140

Case temperature Tc (°C)

Gate-emitter voltage VGE (V)

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Switching time ton, tr, td (on) – RG

3

Switching time ton, tr, td (on) – IC

3 Switching time ton, tr, td (on) (µs) 0.3 Switching time ton, tr, td (on) (µs) Common emitter VCC = 300 V VGG = 15 V 1 IC = 20 A : Tc = 25°C : Tc = 125°C (Note 1) Common emitter VCC = 300 V VGG = 15 V R = 33 Ω 1 G: Tc = 25°C : Tc = 125°C (Note 1) 0.3 ton td (off) 0.03 tr ton 0.1 td (on) tr 0.03 0.1 0.01 1 3

10 30 100 300 1000

0.01 0

4 8 12 16 20

Gate resistance RG (Ω)

Collector current IC (A)

Switching time toff, tf, td (off) – RG

10

Switching time toff, tf, td (off) – IC

10 Switching time toff, tf, td (off) (µs) Switching time toff, tf, td (off) (µs) Common emitter VCC = 300 V VGG = 15 V 3 IC = 20 A : Tc = 25°C : Tc = 125°C 1 (Note 1) 3 1 td (off) toff Common emitter VCC = 300 V VGG = 15 V RG = 33 Ω : Tc = 25°C : Tc = 125°C (Note 1) 0.3 td (off) 0.1 toff 0.3 0.1 tf 0.03 tf 0.01 1 3

10 30 100 300 1000

0.03 0.01 0

4 8 12 16 20

Gate resistance RG (Ω) Collector current IC (A)

Switching loss Eon, Eoff – RG

10 Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C 3 : Tc = 125°C (Note 2) 10

Switching loss Eon, Eoff – IC

Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C (Note 2) Eon 0.3 Switching loss Eon, Eoff (mJ) Switching loss Eon, Eoff (mJ) 3 1 1 Eon 0.3 Eoff 0.1 Eoff 0.1 1 10 3 30 100 300 1000 0.03 0

4 8 12 16 20

Gate resistance RG (Ω) Collector current IC (A)

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C – VCE

10000 3000 1000 Cies 500

VCE, VGE – QG

Collector-emitter voltage VCE (V) Common emitter RL = 15 Ω Tc = 25°C 20 400 16 300 100 Coes 30 Common emitter VGE = 0 10 f = 1 MHz Tc = 25°C 3 1

3

300 300 200 VCE = 100 V 200 100 12 8 Cres 4 10 100 30 300 1000

0 0 20 40 60 80 100 120 0 140 Collector-emitter voltage VCE (V)

Gate charge QG (nC)

IF – VF

40 Common collector VGE = 0 30 100

trr, Irr – IF

Reverse recovery current Irr (A) Common collector di/dt = −100 A/µs VGE = 0 : Tc = 25°C : Tc = 125°C 1000 30 300 20 Tc = 125°C 25 10 −40 0 0 10 trr 100 Irr 3 30 0.5 1 1.5 2 2.5 3 1 0

5 10 15

10 20

Forward voltage VF (V) Forward current IF (A)

Safe Operating Area

100IC max (pulse)* 100

Reverse Bias SOA

Collector current IC (A) 10 DC operation 3 *: Single pulse 1 Tc = 25°C Curves must be 0.3 derated linearly with increase in Collector current IC (A) 30 IC max (continuous) 50 µs* 30 100 µs* 10 3 1 ms* 1 10 ms* 0.3 temperature. 0.1 1 3 10 30 100 300 1000 0.1 1

Tj ≤ 125°C VGE = 15 V RG = 33 Ω 3 10 30 100 1000 300

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

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Reverse recovery time trr (ns) Forward current IF (A) Gate-emitter voltage VGE (V) Capacitance C (pF) GT20J321

Transient thermal resistance rth (t) (°C/W) 210 110 010 −1

rth (t) – tw

FRD IGBT 10 10

−2 10

−3 Tc = 25°C 10

−4 Pulse width tw (s)

−5−4−3−2−101210 10 10 10 10 10 10 10

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RESTRICTIONS ON PRODUCT USE

000707EAA

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice.

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