High-Voltage Transistor with High Current Load Cap

专利名称：High-Voltage Transistor with High Current

Load Capacity and Method for itsProduction

发明人：Georg Rõhrer申请号：US12578256申请日：20091013

公开号：US20100090278A1公开日：20100415

专利附图：

摘要：An isolation area () is provided over a drift region () with a spacing (d) to acontact area () provided for a drain connection (D). The isolation area is used as an

implantation mask, in order to produce a dopant profile of the drift region in which thedopant concentration increases toward the drain. The implantation of the dopant can beperformed instead before the production of the isolation area, and the later productionof the isolation area () changes the dopant profile also in a way that the dopantconcentration increases toward the drain.

申请人：Georg Rõhrer

地址：Graz AT

国籍：AT

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