专利名称：Method for manufacturing coating film with
coating liquid
发明人：Hiroshi Sato申请号：US12676256申请日：20080903公开号：US08298880B2公开日：20121030
专利附图：
摘要：Method for manufacturing a semiconductor device, which may include (a)forming a coating film on a substrate by applying a coating liquid including a polymerconductive material dissolved in an insulating solvent on the substrate after the step (a);
(b) heat-treating the coating film; and (c) forming, before or after the steps (a) and (b), agate electrode on the substrate. Herein, a surface layer portion is an insulating layer, andan inner layer portion is an organic semiconductor layer, and the surface layer portionand the inner layer portion are formed separate from each other to allow the surfacelayer portion and the inner layer portion to be used as a gate insulating film and achannel of a field-effect transistor, respectively.
申请人：Hiroshi Sato
地址：Nirasaki JP
国籍：JP
代理机构：Abelman, Frayne & Schwab
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容