专利名称：Insulated gate semiconductor device发明人：Gourab Majumdar,Touru Iwagami申请号：US08/561255申请日：19951121公开号：US05623152A公开日：19970422
摘要：An insulated gate semiconductor device includes a gate trench having a gateelectrode formed therein on a gate insulating film, and an emitter trench having anemitter electrode formed therein on a silicon oxide layer, to form a capacitance of acapacitor in a main current path by using the silicon oxide layer in the emitter trench,whereby a transient voltage upon switching is decreased and an application systemincluding a snubber circuit is reduced in size.
申请人：MITSUBISHI DENKI KABUSHIKI KAISHA
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, P
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