PHOTOELECTRIC TRANSDUCER AND PRODUCTION METHOD THE

专利名称：PHOTOELECTRIC TRANSDUCER AND

PRODUCTION METHOD THEREFOR

发明人：FUKUI, Atsushi,KASAHARA ,Kei,MIURA,

Yoshiyuki,YAMANAKA, Ryosuke

申请号：EP11842987.7申请日：20111122公开号：EP2645470A4公开日：20170412

摘要：Provided is a photoelectric conversion element (10) which suppresses thegeneration of a reverse current and which has enhanced photoelectric conversionefficiency. The photoelectric conversion element (10) according to the present inventionincludes at least one support (1), conductive layer (2), photoelectric conversion layer (3),porous insulating layer (4), catalyst layer (5), counter conductive layer (6), and countersupport (8) in series. The photoelectric conversion layer (3) includes a poroussemiconductor sub-layer containing a semiconductor material and a photosensitizingelement adsorbed on the porous semiconductor sub-layer. A carrier transport material(9) is placed between the porous insulating layer (4) and the catalyst layer (5). Theporous semiconductor sub-layer and the porous insulating layer (4) contain pores. Thepores are filled with the carrier transport material (9). There is no strong bonding force,obtained by deposition by a screen printing process, a vapor deposition process, or asputtering process, between the porous insulating layer (4) and the catalyst layer (5).

申请人：Sharp Kabushiki Kaisha

地址：22-22, Nagaike-cho Abeno-ku Osaka-shi, Osaka 545-8522 JP

国籍：JP

代理机构：Müller Hoffmann & Partner

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