PATTERN FORMATION METHOD, LITHOGRAPHY APPARATUS, L

专利名称：PATTERN FORMATION METHOD,

LITHOGRAPHY APPARATUS, LITHOGRAPHYSYSTEM, AND ARTICLE MANUFACTURINGMETHOD

发明人：Hiroshi SATO申请号：US14319540申请日：20140630

公开号：US20150008605A1公开日：20150108

专利附图：

摘要：A pattern forming method includes: a first step of forming a first pattern to

define a first shot arrangement; and a second step of performing an imprint process,thereby forming a second pattern on the imprint material on the first pattern anddefining a second shot arrangement. In the second step, the second shot arrangement isdefined so as to reduce an overlay error between the first and second shot

arrangements by deforming the mold. In the first step, based on information of theestimated second shot arrangement definable on the substrate when the second step isperformed after the second pattern formed on the mold is amended by deforming themold, the first pattern is formed to make an overlay error between the first and secondshot arrangements fall within an allowable range.

申请人：CANON KABUSHIKI KAISHA

地址：Tokyo JP

国籍：JP

更多信息请下载全文后查看