专利名称：Structure and method for manufacturing
device with planar halo profile
发明人：HUILONG ZHU,JING WANG申请号：US11955515申请日：20071213
公开号：US20090152646A1公开日：20090618
专利附图：
摘要：A semiconductor device and method for manufacturing the device with a planarhalo profile is provided. The semiconductor device can be a MOSFET. The method offorming the structure includes forming an angled spacer adjacent a gate structure and
implanting a halo implant at an angle to form a halo profile having low dopant
concentration near a gate dielectric under the gate structure. The structure includes anunderlying wafer or substrate and an angled gate spacer having an upper portion and anangled lower portion. The upper portion is structured to prevent halo dopants frompenetrating an inversion layer of the structure. The structure further includes a lowconcentration halo dopant within a channel of a gate structure.
申请人：HUILONG ZHU,JING WANG
地址：POUGHKEEPSIE NY US,FISHKILL NY US
国籍：US,US
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