专利名称：Method for manufacturing a power device
with insulated gate and trench-gatestructure having controlled channel lengthand corresponding device
发明人：Antonino Sebastiano Alessandria,Leonardo
Fragapane
申请号：US10996131申请日：20041123
公开号：US20050139913A1公开日：20050630
专利附图：
摘要：A method for manufacturing a semiconductor power device with an insulatedgate and trench-gate structure integrated on a semiconductor substrate includesproviding a body region in the semiconductor substrate, forming a surface source regionon the body region, etching the semiconductor substrate and forming a trench to formthe trench-gate structure. The method also includes forming a deep portion of thesource region along the trench.
申请人：Antonino Sebastiano Alessandria,Leonardo Fragapane
地址：Catania IT,Catania IT
国籍：IT,IT
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